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24–27 Sep 2023
东莞园区
Asia/Shanghai timezone

Study on the upgrade of the LHCb Upstream Tracker with HVCMOS technology

25 Sep 2023, 16:30
20m

Speaker

Zhiyu Xiang

Description

The LHCb experiment is planning a Phase 2 upgrade around 2032, aiming to increase the luminosity by nearly an order of magnitude. The higher luminosity collision will generate a larger number of final-state tracks, posing new challenges for the detector's spatial resolution and radiation tolerance. Therefore, the Upstream Tracker (UT) will be upgraded to a higher granularity silicon pixel detector. CMOS technology presents an appealing solution due to its high performance and cost-effectiveness. Unlike many CMOS processes that require modifications and enhancements to generate sufficient signal, the commercially available high resistance wafer based High Voltage CMOS (HVCMOS) is intrinsically radiation hard and has large capacitance for signal acquisition. In recent years, the HVCMOS production process has developed, could be customized commercially. The HVCMOS using 55nm low leakage current process has emerged as a promising candidate for the UT upgrade.

Primary author

Presentation materials