Speaker
Description
Numerical modeling of the interaction of fast and thermal neutrons with semiconductor microcrystals (InSb, InAs, GaAs) was conducted using the GEANT4 software environment. The study aimed to determine the rates of nuclear reactions (elastic and inelastic scattering, radiative capture) and analyze the influence of secondary fission products on the radiation resistance of semiconductor electronics. Additionally, the SRIM software was used to evaluate the linear energy transfer (LET) and ranges of secondary particles within the materials, providing further insight into the mechanisms of radiation damage.
The obtained data are of key importance for understanding the physical processes occurring in semiconductors under neutron irradiation and can be used to develop methods for enhancing the radiation tolerance of materials. The simulation results are planned to be verified experimentally using reactor facilities with a defined neutron spectrum, ensuring more accurate predictions of the electrophysical properties of semiconductors under radiation exposure. The practical significance of this research lies in its applicability in nuclear energy, aerospace, medical technology, and microelectronics, where radiation resistance of materials is a critical parameter.
