Recent Mightypix1 (HV-CMOS detector) time resolution results using an infrared laser and previous research on-sensor time projection chamber using Timepix3 with planar and 3D silicon hybrid sensors

Friday 27 Dec 2024, 16:30 → 18:30 Asia/Shanghai

报告人：姓名 高天齐 
报告时间：2024年12月27日     

报告摘要：Using an infrared laser (IR wavelength 1064 nm, silicon penetration 1000 um) with trigger and Mightypix1 on GECCO readout, we perform characterisation tests, such as bias-voltage and threshold scan, and pixel variation tests. We found that the sensor can achieve 2.7 ns time resolution, meeting the design specification of 3 ns. Reconfirmed previous findings by groups in Germany, such as chip-ring biasing results in uneven depletion region in low voltages and signal disruption due to the layers of wires buried on the surface of the chip.
We tested the 3D track reconstruction capability of a single 500 um thick planar silicon sensor bonded to a Timepix3 chip, and the result was very positive. During which, we found that the uneven electric field in the 3D geometry silicon sensors causes the drift-time in this region to be as high as 300x the normal drift-time (< 1ns), and Timepix3 has the time resolution to resolve it. Using 2-photon absorption to scan/divide the region to map each coordinate with its unique drift-time number, with a goal to create a temporal correction table for already installed and future 3D sensors and demonstrate their potential usage as a radiation hard mini time projection chamber (TPC).

报告人简介：高天齐博士在曼彻斯特大学的PhD以及Postdoc（1年）期间的研究有Timepix3, 3D electrode silicon sensor, thermal neutron imaging camera. 目前在剑桥大学做LHCb upgrade II的pixel detector R&D的工作, 主要参与Mightypix的设计，测试，拼装，及未来Q&A的项目。