Speaker
Description
High-voltage CMOS (HV-CMOS) pixel sensors represent a promising candidate for tracking applications in future high-energy physics experiments. Building upon the established 180 nm and 130 nm process nodes, our COFFEE2 prototype has been developed in a commercial 55 nm HV-CMOS technology to further explore the performance potential of advanced CMOS processes. The COFFEE2 chip integrates not only pixel-level circuitry for verifying basic sensor and analog front-end functionality, but also a full data-driven readout array. To evaluate its radiation tolerance, the chip was irradiated with protons at the China Spallation Neutron Source (CSNS), with a focus on key operational parameters including leakage current, signal-to-noise ratio, and overall functionality under increasing fluence. In addition, X-ray irradiation was performed to assess the device response to total ionizing dose (TID) effects. These preliminary irradiation results provide initial validation of both the COFFEE2 design and the commercial 55 nm HV-CMOS process, demonstrating its viability for future detector applications.
