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Description
The Circular Electron Positron Collider (CEPC) requires a fast luminosity detector to achieve a relative measurement precision of 2% at a sampling rate of 1 kHz in order to drive a real-time orbit feedback system, due to its extremely high luminosity. 4H-SiC, with its wide bandgap, high displacement threshold energy, and high saturated electron drift velocity, simultaneously offers excellent radiation hardness (particularly its superior tolerance to gamma rays), picosecond-level time response, and low leakage current at elevated temperatures. These properties make it perfectly suited for the extreme environmental demands of fast luminosity detection in the forward region of CEPC.
This work reports on the development progress of the 4H-SiC Low-Gain Avalanche Diode (SICAR3). The device fabrication is based on a mature 350 nm MOSFET process platform. The SICAR3 achieves an avalanche gain of 10–15 and a time resolution improved to 60 ps. In terms of key design, the device directly adopts a high-temperature ion-implanted Junction Termination Extension (JTE) as the termination structure, which effectively suppresses leakage current and overcomes the limitation on the usable active area. The successful tape-out of SICAR3 lays a solid foundation for the engineering application of large-area, low-leakage 4H-SiC LGADs for the CEPC fast luminosity detector.
