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Description
Understanding radiation-induced defects in Low Gain Avalanche Detectors (LGADs) is critical to explaining gain layer degradation after intense radiation. Previous studies using thermally stimulated current (TSC) cannot distinguish defect signals originating from the gain layer versus from the bulk region, while deep-level transient spectroscopy (DLTS) investigations have not extracted defect energy levels in LGAD gain layers. This work enables DLTS to selectively probe defects in the gain layer by partially depleting the gain layer through controlling the bias voltage. Proton-irradiated (1×1011–1×1013 p·cm-2) p-type Si epitaxial PIN diodes and LGADs, the latter both with and without shallow carbon doping, at bulk resistivities of 350 and 1000 Ω·cm are studied.
