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SUMMARY:Development of Semiconductor Detectors: From Sensor Physics to Rea
 dout
DTSTART:20260923T023000Z
DTEND:20260923T043000Z
DTSTAMP:20260928T180500Z
UID:indico-event-30834@indico.ihep.ac.cn
DESCRIPTION:https://zoom.us/j/93819223668?pwd=RQUw1HxfRm6h8MvfZ18fWxJ9XmUk
 2I.1943593About the speaker:Dr. Chuan Liao is a postdoctoral researcher at
  the International Center for Quantum-field Measurement Systems for Studie
 s of the Universe and Particles (QUP) of High Energy Accelerator Researc
 h Organization (KEK). His research on semiconductor detectors began durin
 g his master's studies\, where he used TCAD simulations to optimize 3D sil
 icon detector structures. He then received his Ph.D. from the University o
 f Hamburg\, where he studied radiation-induced defects in p-type silicon d
 etectors\, with particular emphasis on the characterization of radiation-i
 nduced defects in silicon. After joining KEK in 2024\, his research expand
 ed to detector readout. He has worked on high-speed transimpedance amplifi
 ers\, laser-based characterization of 3D silicon detectors\, and FPGA-base
 d data acquisition using Vivado. Abstract Semiconductor detectors are e
 ssential components of modern particle physics experiments\, where increas
 ingly demanding requirements on detector performance motivate the developm
 ent of new sensor and readout technologies.In this seminar\, I will presen
 t my research on semiconductor detector development\, from sensor physics 
 to fast readout electronics. I will first introduce TCAD-based detector de
 sign and simulation\, including my early work on 3D silicon detector struc
 tures and more recent studies of GaN radiation detectors with internal a
 valanche multiplication. In these devices\, defects can play a significant
  role in determining detector performance\, which leads to the second topi
 c: defect engineering in irradiated silicon detectors\, particularly the c
 haracterization of radiation-induced defects and their influence on detect
 or performance.In the final section\, the seminar will focus on fast detec
 tor readout. I will present my recent work on the development of high-spee
 d transimpedance amplifiers for silicon detectors. Finally\, FPGA-based da
 ta acquisition will also be discussed.\n\nhttps://indico.ihep.ac.cn/event/
 30834/
URL:https://indico.ihep.ac.cn/event/30834/
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