Speaker
Mx
Jianpeng Deng
(Zhejiang University)
Description
Technology Computer-Aided Design (TCAD) simulations were conducted on High Voltage CMOS (HV-CMOS) sensors with varying substrate resistivities. The simulations investigated how changes in substrate resistivity affect leakage current, breakdown voltage, the depletion region, and the distribution of high electric field areas within the sensor. The effects of pixel gap and p-stop on capacitance were evaluated, with simulation results agreeing with experimental measurements. Furthermore, Allpix2 simulations provided insights into the sensor's response to Minimum Ionizing Particles (MIPs), facilitating an analysis of signal collection and charge sharing phenomena across different substrate resistivities.
Primary authors
Hongbo Zhu
(Zhejiang University)
Mx
Jianpeng Deng
(Zhejiang University)
Mei Zhao
(高能所, IHEP)
Weiguo Lu
(IHEP)
Yang ZHOU
(IHEP)
Yiming 一鸣 Li 李
(IHEP)
Zhiyu Xiang
Zijun Xu
(Peking Univ.)
乐怡 李
(中国科学院高能物理研究所（IHEP）)
