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Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

29 May 2025, 15:05
15m
Room V7 (4th floor)

Room V7

4th floor

Speaker

Аlmas Yskakov (JINR)

Description

Abstract
The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 ·1014 cm−2 ÷ 5·1017 cm−2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation and during the neutron irradiation. The work discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs and InAs/Al2O3 heterostructures in electronic applications.

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