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About the speaker:
Dr. Chuan Liao is a postdoctoral researcher at the International Center for Quantum-field Measurement Systems for Studies of the Universe and Particles (QUP) of High Energy Accelerator Research Organization (KEK).
His research on semiconductor detectors began during his master's studies, where he used TCAD simulations to optimize 3D silicon detector structures. He then received his Ph.D. from the University of Hamburg, where he studied radiation-induced defects in p-type silicon detectors, with particular emphasis on the characterization of radiation-induced defects in silicon. After joining KEK in 2024, his research expanded to detector readout. He has worked on high-speed transimpedance amplifiers, laser-based characterization of 3D silicon detectors, and FPGA-based data acquisition using Vivado.
Abstract
Semiconductor detectors are essential components of modern particle physics experiments, where increasingly demanding requirements on detector performance motivate the development of new sensor and readout technologies.
In this seminar, I will present my research on semiconductor detector development, from sensor physics to fast readout electronics. I will first introduce TCAD-based detector design and simulation, including my early work on 3D silicon detector structures and more recent studies of GaN radiation detectors with internal avalanche multiplication. In these devices, defects can play a significant role in determining detector performance, which leads to the second topic: defect engineering in irradiated silicon detectors, particularly the characterization of radiation-induced defects and their influence on detector performance.
In the final section, the seminar will focus on fast detector readout. I will present my recent work on the development of high-speed transimpedance amplifiers for silicon detectors. Finally, FPGA-based data acquisition will also be discussed.