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Nov 26 – 27, 2021
Asia/Shanghai timezone

高纯锗探测器大动态范围CMOS前放设计

Nov 26, 2021, 5:22 PM
18m

Speaker

嘉俊 郝 (清华大学)

Summary

现有的大动态范围前放均为阻容反馈结构,但反馈电阻不仅引入并联噪声,同时不利于降低前端电子学本底。本文设计的二阶放大、双通道输出的大动态范围前放芯片,通过“提前复位”的特殊设计,在不引入反馈电阻的情况下,将死时间占比控制在0.1%水平。大动态范围前放实现了从~ 100 eV到~ 5 MeV的动态范围。大动态范围前放芯片在77 K低温下进行了测试,其中高增益挡的最小ENC为43 e-。通过不同幅度输入信号时的计数率实验,验证了“提前复位”可以有效避免计数损失。对于提高高纯锗探测器在低本底物理实验中的利用效率、降低实验成本具有重要意义。

Primary authors

嘉俊 郝 (清华大学) Dr 智 邓 (清华大学)

Presentation materials