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碳化硅高时间分辨探测器

Aug 11, 2022, 2:08 PM
2m

Speaker

Xin Shi (IHEP)

Description

粒子物理高能量质子-质子对撞、核物理电子-离子对撞等科学前沿,以及在建的高能质子束线等大科学装置急需具有抗辐照能力强、时间分辨能力高的半导体粒子探测器。碳化硅作为第三代宽禁带半导体材料,具有更大禁带宽度、更高位移阈能和更高击穿场强等显著优势,成为高温抗辐照粒子探测器研究领域的前沿热点。本报告将针对已有的4H-SiC器件的快时间响应(94ps)进行介绍,并对未来的3D-SiC器件经过自主开发软件RASER研究可以达到25ps的响应速度进行展望。

Primary author

Xin Shi (IHEP)

Presentation materials