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ToF（OTK）meeting

→ Asia/Shanghai
B410

B410
Description

The topic is as following:

1. Hit rate simulation with the new geometry included in the CEPCSW （Yudian）

2. Power consumption of the ASIC （Xiongbo）

3. Endcap design of the  ToF&OTK

    • 1
      Hit rate simulation with the new ToF（OTK）geometry included in the CEPCSW
      Speaker: Dian Yu (SJTU)
    • 2
      Power consumption of the ASIC for ToF（OTK）
      Speaker: Xiongbo 严雄波 YAN Xiongbo (高能所)
      ASIC 排布及功耗.pptx
    • 3
      Endcap design of ToF（OTK）
      Speaker: Dr Yunyun Fan（樊云云） (IHEP)
      20240830Yunyun-general-talkv1.pptx
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