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May 21 – 26, 2017
Beijing International Convention Center
Asia/Shanghai timezone

Pixel Detector Developments for Tracker Upgrades of the High Luminosity LHC

May 24, 2017, 5:24 PM
Room 307 (Beijing International Convention Center)

Room 307

Beijing International Convention Center

No.8 Beichen Dong Road, Chaoyang District, Beijing P. R. China 100101
oral Semiconductor detectors R4-Semiconductor detectors(4)


Marco Meschini (I)


The talk will report on the INFN ATLAS-CMS joint research activity in collaboration with FBK, which is aiming at the development of new pixel detectors for the LHC Phase-2 upgrades. The talk will cover the main aspects of the research program, starting from the sensor design and fabrication technology, with an outlook on the future steps using both Silicon On Insulator (SOI) and Direct Wafer Bonded (DWB) wafers. The RD covers both planar and 3D, made with columnar technology, pixel devices. All sensors are low thickness n-in-p type, as this is the mainstream foreseen for the HL-LHC pixel upgrades. Results from device characterization measurements will be shown. Hybrid modules, with 100µm and 130µm active thickness, connected to the PSI46dig readout chip, have been tested on beam test experiments. Most recent results from test beams will be presented.

Primary author


Prof. Alberto Messineo (University of Pisa and INFN, Italy) Dr Boscardin Maurizio (FBK, Fondazione Bruno Kessler, Trento, Italy) Prof. Gian Franco Dalla Betta (University of Trento, Italy)

Presentation materials