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InP基单片集成同一有源量子阱型探测器

Not scheduled
15m
湘潭大学

湘潭大学

Speaker

Dr Guangcan Chen (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences)

Description

为了实现片上微波信号的直接输出,我们提出了基于InP/InGaAsP材料体系探测器与激光器采用同一有源量子阱结构的集成方案。所制备探测器与Fabry-Parot激光器的集成器件共脊波导,采用湿法腐蚀加离子注入实现不同器件之间的电隔离,隔离电阻约为60 kΩ。探测器在-3 V反偏电压下,暗电流低于10 μA,C波段的响应度大于0.4 mA/mW, -3-dB带宽大于10 GHz,饱和输出电流大于26 mA。

Primary author

Dr Guangcan Chen (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences)

Co-authors

Prof. Dan Lu (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences) Dr Huan Wang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences) Prof. Lingjuan Zhao (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences) Dr Lu Guo (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences) Dr Wu Zhao (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences)

Presentation materials

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