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May 21 – 26, 2017
Beijing International Convention Center
Asia/Shanghai timezone

Gain stabilization and afterpulsing studies of SiPMs

May 24, 2017, 2:36 PM
Room 307 (Beijing International Convention Center)

Room 307

Beijing International Convention Center

No.8 Beichen Dong Road, Chaoyang District, Beijing P. R. China 100101
oral Photon detectors R4-Photon detectors(4)


Dr Eigen Gerald (University of Bergen)


The gain of SiPMs increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be adjusted to compensate temperature changes. We have tested this concept with 30 SiPMs from three manufacturers (Hamamatsu, KETEK, CPTA) in a climate chamber at CERN varying the temperature from 1°C to 50°C. We built an adaptive power supply that used a linear temperature dependence of the bias voltage readjustment. With one selected bias voltage readjustment, we stabilized four SiPMs simultaneously. We fulfilled our goal of limiting the deviation from gain stability in the 20°C-30°C temperature range to less than ±0.5% for most of the tested SiPMs. We further studied afterpulsing for sensors with trenches.

Primary author

Dr Eigen Gerald (University of Bergen)


Mr Are Traeet (University of Bergen) Dr Jaroslav cvach (Institute of Physics of the ASCR) Mr Jiri Kvasnicka (Institute of Physics of the ASCR) Dr Justas Zalieckas (University of Bergen) Mr Polak Ivo (Institute of Physics of the ASCR,)

Presentation materials