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21-26 May 2017
Beijing International Convention Center
Asia/Shanghai timezone
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R4-Semiconductor detectors(6)

Place

Location: Beijing International Convention Center
Address: No.8 Beichen Dong Road, Chaoyang District, Beijing P. R. China 100101
Date: 25 May 14:00 - 3:30 PM

Conveners

    • Arai, Yasuo (High Energy Accelerator Research Organization (KEK))
    • Gan, K.K. (The Ohio State University)

Timetable | Contribution List

Displaying 5 contributions out of 5
Type: oral Session: R4-Semiconductor detectors(6)
Track: Semiconductor detectors
Silicon-on-insulator (SOI) wafer technology can be used to achieve a monolithic pixel detector, in which both a semiconductor pixel sensor and readout electronics are integrated in the same wafer. We are developing an SOI pixel sensor SOFIST, SOI sensor for Fine measurement of Space and Time, optimized for the vertex detector system of the International Linear Collider (ILC) experiment. This senso ... More
Presented by Shun ONO on 25/5/2017 at 14:36
Type: oral Session: R4-Semiconductor detectors(6)
Track: Semiconductor detectors
Results from an SOI pixel sensor with in-pixel binary counters are reported. It's been well known that the transition of output pattern within each counter would induce considerably large spurious signal on the nearby charge collection electrodes, which interferes with the detection of real signals. Among the various remedies investigated, Double-SOI process proved to be an effective cure thanks t ... More
Presented by Dr. Yunpeng LU on 25/5/2017 at 14:00
Type: oral Session: R4-Semiconductor detectors(6)
Track: Semiconductor detectors
Monolithic pixel devices are attractive for various aspects in particle detector application. One of the notable features is that the pixel size can be reduced without constraints from the metal bumps which limit the pixel size of hybrid pixel devices typically to 50um. We are developing monolithic pixel devices utilizing Lapis 0.20 um FD-SOI (Fully-Depleted Silicon-on-Insulator) technology. FPIX, ... More
Presented by Kazuhiko HARA on 25/5/2017 at 14:18
Type: oral Session: R4-Semiconductor detectors(6)
Track: Semiconductor detectors
The secondary electron properties of nano-thick aluminum oxide have been studied. The MCP assembly performance improvement through coating aluminum oxide is investigated. The gain, the charge resolution and the peak-to-valley ratio of the MCP detector are improved. Two possible solutions are proposed to improve the maximum yield with reduced optimal energy of secondary electron emission materials.
Presented by Dr. Yan BAOJUN on 25/5/2017 at 6:54
Type: oral Session: R4-Semiconductor detectors(6)
Track: Semiconductor detectors
Low gain avalanche detectors (LGAD) were attracted considerable attention as a new concept of silicon radiation detectors. These devices are based on reach‐through avalanche photodiodes and provide a moderate gain (gain~10). Compared with general avalanche photodiodes (APD), LGAD have a remarkable improvement of the signal-to-noise ratio (SNR) which makes them more suitable to detect high energy ... More
Presented by Prof. Guangqing YAN on 25/5/2017 at 15:12
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